A novel circuit topology has been developed for applications requiring high-voltage RF energy. It uses an unusual combination of an RC-based oscillator, a GaN FET and driver to deliver RF power at efficiencies over 95%.
Tolga Aydemir, Principal Electronics Consultant at 42 Technology, is featured in Bodo’s Power Systems. The article highlights the development of a novel circuit topology that will transform industries with RF power.
Advances in radio frequency (RF) generation have led to innovative designs transforming applications within the sub-100 MHz region. Among these, high-efficiency self-oscillating Class E RF generators stand out for their simplicity, robustness, and remarkable performance by leveraging Gallium Nitride (GaN) transistors. These generators can achieve efficiencies over 95% with output voltages of several kV from a few watts up to 1 kW depending on the application.
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Published by Bodo’s Power Systems, January 2025.